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UH4PBC, UH4PCC, UH4PDC
www.vishay.com
Vishay General Semiconductor
Revision: 29-May-12
2
Document Number: 88991
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤
40 ms
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
Note
(1)
Automotive grade
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
per diode
IF
= 1.0 A
= 2.0 A 0.93 1.05
TA
= 25 °C
VF
(1)
0.84 -
V
IF
IF
= 1.0 A
= 2.0 A 0.77 0.85
TA
= 125 °C
0.68 -
IF
Reverse current per diode Rated VR
TA
= 25 °C
= 125 °C 6.4 25
IR
(2)
-5μA
TA
Maximum reverse recovery time per diode
IF
= 0.5 A, I
R
= 1.0 A,
Irr
= 0.25 A
trr
20 25 ns
Typical reverse recovery time per diode
IF
= 1.0 A, dI/dt = 50 A/μs,
VR
= 30 V, I
rr
= 0.1 I
RM
24 -
Typical softness factor (tb/ta)per diode
IF
= 2 A, dI/dt = 200 A/μs,
VR
= 200 V, I
rr
= 0.1 I
RM
TA
= 125 °C
S0.3 - -
Typical reverse recovery current per diode
IRM
5.4 - A
Typical stored charge per diode
Qrr
88 - nC
Typical junction capacitance per diode 4.0 V, 1 MHz CJ
21 - pF
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL UH4PBC UH4PCC UH4PDC
UNIT
Typical thermal resistance per diode
R
θJA
(1)
60
°C/W
RθJL
4
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
UH4PDC-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
UH4PDC-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
UH4PDCHM3/86A (1)
0.10 86A 1500 7" diameter plastic tape and reel
UH4PDCHM3/87A (1)
0.10 87A 6500 13" diameter plastic tape and reel
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